| 摘要 |
PURPOSE: Provided are a sulfonamide compound used as a monomer of a polymer for a resist material which has high transmittance against exposing light of a wavelength up to a 300 nm band, good adhesiveness to a substrate and superior solubility in developer without swelling, and a pattern formation method using the resist material. CONSTITUTION: The base polymer of a resist material comprises as a unit, a sulfonamide compound of the formula 1, wherein R1-R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain, branched or cyclic alkyl group or a fluoridated alkyl group with carbon atoms of 1-20; R4 is a straight-chain, branched or cyclic alkylene group with carbon atoms of 0-20, and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain, branched or cyclic alkyl group, a fluoridated alkyl group with carbon atoms of 1-20, or a protecting group released by an acid. The pattern formation method comprises the steps of: forming a resist film made of a resist material containing such polymer as a base resin, selectively irradiating the resist film with high energy beams or electron beams to perform pattern exposure, and developing the exposed resist film to form a resist pattern.
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