FABRICATING METHOD OF TEOS LAYER FOR FORMING THIN FILM UNIFORM THICKNESS ON SEMICONDUCTOR SUBSTRATE BY FORMING PROTECTIVE LAYER ON INSIDE OF CHAMBER

摘要

PURPOSE: A fabricating method of a TEOS(Tetra ethyl orthosilicate) layer is provided to maintain uniformly a thickness of a TEOS layer by forming the TEOS layer on an upper surface of a semiconductor substrate after performing a preliminary coating process. CONSTITUTION: A protective layer having a stress value of -145 to -255Mpa is formed in an inside of a PECVD apparatus by performing a first preliminary coating process within the PECVD apparatus. A semiconductor substrate is loaded into the PECVD apparatus. A TEOS layer is formed on an upper surface of the semiconductor substrate(S3). A cleaning process for the inside of the PECVD apparatus is performed after the TEOS layer is formed on the upper surface of the semiconductor substrate(S4).