| 摘要 |
<p>A switch capable of responding at a high rate at a lower DC potential and providing a high isolation is provided. In this switch, using microstructure group 103 having microstructure 102a, 102b and 102c, by slightly moving the microstructures 102a, 102b, and 102c a little, the group as a whole achieves a large amount of movement. Also, by this configuration, it is possible to decrease a DC potential to apply to the control electrodes 106a, 106b, 107a, 107b, 108a, 108b, 109a and 109b of the microstructures 102a, 102b and 102c. As a result, a high isolation switch 100 capable of operating at a high rate at a lower DC potential is realized. <IMAGE></p> |
