发明名称 |
Method and apparatus for production of metal film |
摘要 |
<p>In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film. <IMAGE></p> |
申请公布号 |
EP1512770(A1) |
申请公布日期 |
2005.03.09 |
申请号 |
EP20040026951 |
申请日期 |
2003.03.04 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
SAKAMOTO,HITOSHI;YAHATA, NAOKI;NISHIMORI,TOSHIHIKO;OOBA,YOSHIYUKI;TONEGAWA,HIROSHI;KOSHIRO,IKUMASA;OGURA, YUZURU |
分类号 |
C23C16/08;C23C16/14;C23C16/44;C23C16/448;H01J37/32;H01L21/285;H01L21/44;H01L21/768;(IPC1-7):C23C16/08 |
主分类号 |
C23C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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