发明名称 Utilizing atomic layer deposition for programmable device
摘要 In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening (220) is formed through a dielectric (210) exposing a contact (170), the contact (170) formed on a substrate (100). An electrode (230) is conformally deposited on a wall of the dielectric (210), utilizing atomic layer deposition (ALD). A programmable material (404) is formed on the electrode (230) and a conductor (410) is formed to the programmable material (404). In an aspect, a barrier (408) is conformally deposited utilizing ALD, between the electrode (230) and the programmable material (404).
申请公布号 GB0501967(D0) 申请公布日期 2005.03.09
申请号 GB20050001967 申请日期 2002.08.21
申请人 OVONYX INC 发明人
分类号 H01L27/105;H01L27/10;H01L27/24;H01L45/00 主分类号 H01L27/105
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