发明名称 A HIGH POWER PREMATCHED MMIC TRANSISTOR WITH IMPROVED GROUND POTENTIAL CONTINUITY
摘要 <p>A multicell transistor for use in a circuit has an input ground plane for an input waveguide and an output ground plane for an output waveguide. The multicell transistor includes a gate electrode coupled to the input waveguide, a drain electrode coupled to the output waveguide, and a source electrode coupled to the input ground plane. An output ground strap spaced from the drain electrode couples the output ground plane to the source electrode. A pair of transmission lines are orthogonally connected to and extend from the gate electrode to form a pair of inductors for matching the impedances of the gate electrode and the input waveguide.</p>
申请公布号 EP0950263(B1) 申请公布日期 2005.03.09
申请号 EP19980957512 申请日期 1998.11.03
申请人 RAYTHEON COMPANY 发明人 WEN, CHENG, P.;CHU, PETER;COLE, MICHAEL, R.;WONG, WAH, S.;WANG, ROBERT, F.;HOU, LIPING, D.
分类号 H01L25/18;H01L23/482;H01L23/66;H01L25/04;(IPC1-7):H01L23/66 主分类号 H01L25/18
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