METHOD OF MANUFACTURING TFT WITH CRYSTALLINE ACTIVE LAYER USING SEQUENTIALLY METAL INDUCED LATERAL CRYSTALLIZATION AND ION-IMPLANTATION

摘要

PURPOSE: A method of manufacturing a TFT(Thin Film Transistor) is provided to prevent an ion-implantation from influencing badly an MILC(Metal Induced Lateral Crystallization) and to improve gettering effect of residual metal in a channel region by implanting dopants into an active layer after completing the MILC. CONSTITUTION: A gate(13) is formed on a silicon active layer of an insulating substrate. A predetermined metal(14) for MILC is applied to the active layer. A heat treatment is performed on the resultant structure in order to crystallize the active layer. An ion-implantation is performed on the active layer.