发明名称 |
A non-volatile flash memory |
摘要 |
<p>A method of operating a non-volatile memory cell, wherein the non-volatile memory cell includes a word line, a first bit line, and a second bit line, the method includes programming the memory cell that includes applying a high positive bias to the first bit line, applying a ground bias to the second bit line, and applying a high negative bias to the word line, wherein positively-charged holes tunnel through the dielectric layer into the trapping layer.</p> |
申请公布号 |
EP1513160(A1) |
申请公布日期 |
2005.03.09 |
申请号 |
EP20040002237 |
申请日期 |
2004.02.02 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
YEH, CHIH-CHIEH;CHEN, HUNG-YUEH;TSAI, WEN-JER;LU, TAO-CHENG |
分类号 |
G11C16/02;G11C16/04;G11C16/06;G11C16/26;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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