| 摘要 |
PROBLEM TO BE SOLVED: To enable a crystalline base solar cell to be manufactured at low cost without wasting a crystalline semiconductor by a method in which a hole made of implanted elements in stratified mode deposited from a crystalline semiconductor to be distributed in stratified mode is formed to cut off the crystalline semiconductor in the hole for the formation of a semiconductor layer. SOLUTION: After ion implanting the first conductivity type crystalline semiconductor 2 with a specific element 4 at a specific depth, the crystalline semiconductor is bonded onto a substrate 1. Next, the specific element 4 is deposited from the cystalline semiconductor 2 by heat treatment so as to form a hole 4a distributed in a stratified mode in the crystalline semiconductor 2. Next, the first conductivity type semiconductor layer 2a is formed on the substrate 1 by cutting off the crystalline semiconductor 2 by heat treatment in the region of the hole 4a distributed in the stratified mode. Next, the second conductivity type semiconductor layer 5 is formed inside or on the first conductivity type semiconductor layer 2a. For example, the specific element is specified to be hydrogen or a rare gas while the specific depth is specified not to exceed 100μm. |
