发明名称 Magnetoresistive element, magnetic memory cell, and magnetic memory device
摘要 The present invention provides a magnetic memory device capable of performing stable information writing operatio n by efficiently using a magnetic field generated by current flowing in a conductor and stably holding written information. A magnetic memory device includes: magnetic yoke disposed in correspondence with a region in which a write bit line and a write word line cross each other and constructed so as to surround partially or entirely the periphery of the lines; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field, and magnetically coupled to the magnetic yoke. The second magnetic layer has coercive force larger than that of the magnetic yoke, and coercive force of the magnetic yoke increases toward the second magnetic layer. Thus, the influence by remanent magnetization of the magnetic yoke can be suppressed, and the magnetization direction of the second magnetic layer can be stably held. <IMAGE>
申请公布号 EP1513158(A1) 申请公布日期 2005.03.09
申请号 EP20040021016 申请日期 2004.09.03
申请人 TDK CORPORATION 发明人 HATATE, HITOSHI
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08 主分类号 G11C11/15
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