发明名称 |
Photoresist residue removing liquid composition |
摘要 |
The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc.This is made possible by a photoresist residue removing liquid composition containing one or more members selected from the group consisting of reducing compounds and their salts and one or more members selected from the group consisting of aliphatic polycarboxylic acids and their salts.
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申请公布号 |
US6864044(B2) |
申请公布日期 |
2005.03.08 |
申请号 |
US20020309797 |
申请日期 |
2002.12.04 |
申请人 |
KANTO KAGAKU KABUSHIKI KAISHA |
发明人 |
ISHIKAWA NORIO;OOWADA TAKUO |
分类号 |
C11D7/26;G03F7/42;H01L21/027;H01L21/302;H01L21/308;(IPC1-7):G03F7/42;C11D9/00 |
主分类号 |
C11D7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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