发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR SIMPLIFYING MANUFACTURING PROCESSES AND ECONOMIZING FABRICATION COSTS
摘要 PURPOSE: A method of manufacturing a semiconductor device is provided to simplify manufacturing processes and to economize fabrication costs by filling simultaneously a copper line and a pad layer in a dual damascene pattern. CONSTITUTION: A first and second dual damascene pattern are formed within a core and pad region, respectively. A copper film for filling completely the first dual damascene pattern and filling partially the second dual damascene pattern is formed thereon. A conductive layer(51) for preventing the diffusion of copper and an oxidation resistant metal film are formed on the copper film. Copper lines(500) are completed in the first and second dual damascene patterns by performing polishing on the resultant structure. At this time, A pad layer(520) made of the oxidation resistant metal film is formed on the copper line of the second dual damascene pattern. A passivation layer(53) is formed on the entire surface of the resultant structure.
申请公布号 KR20050022595(A) 申请公布日期 2005.03.08
申请号 KR20030059421 申请日期 2003.08.27
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 BAEK, SEONG HAK
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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