Capacitor with via plugs forming first and second electrodes in a multilayer wiring structure of a semiconductor device

摘要

A capacitor which can be manufactured easily without an addition of photo masks and manufacturing processes is obtained.The capacitor has a plural via plugs (1a to 1c) which function as a first electrode and a plural via plugs (2a to 2c) which function as a second electrode. The via plugs (1a to 1c) are formed in a row along an X direction, and similarly, the via plugs (2a to 2c) are also formed in a row along the X direction. The capacitor is formed in a multilayer wiring structure of a semiconductor device, and the via plugs (1a to 1c) and the via plugs (2a to 2c) face each other with part of an interlayer insulating film between. Part of the interlayer insulating film which is put between the via plugs (1a to 1c) and the via plugs (2a to 2c) function as a capacitor dielectric film.