发明名称 Bump and fabricating process thereof
摘要 A bump structure on a contact pad and a fabricating process thereof. The bump comprises an under-ball-metallurgy layer, a bonding mass and a welding lump. The under-ball-metallurgy layer is formed over the contact pad and the bonding mass is formed over the under-ball-metallurgy layer by conducting a pressure bonding process. The bonding mass having a thickness between 4 to 10 mum is made from a material such as copper. The welding lump is formed over the bonding mass such that a sidewall of the bonding mass is also enclosed.
申请公布号 US6864168(B2) 申请公布日期 2005.03.08
申请号 US20030604792 申请日期 2003.08.18
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;CHANG CHIH-HUANG;WU JENG-DA;HUANG WEN-PIN;CHENG PO-JEN
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/447 主分类号 H01L21/60
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