发明名称 COF semiconductor device and a manufacturing method for the same
摘要 A manufacturing method for a COF semiconductor device according to the present invention comprises:Step (A) of applying an insulating resin composition to a surface of an insulating tape on the surface of which a plurality of wiring patterns is arranged;Step (B) of pressably contacting a semiconductor element to the wiring patterns in the condition wherein the insulating resin composition is not yet cured; andStep (C) of fixing the semiconductor element to the wiring patterns so as to be electrically connected by curing the insulating resin composition, whereinthe manufacturing method for a COF semiconductor device further includes Step (D) of pre-heating the insulating tape from the rear surface side before, during, and/or after the application of the insulating resin composition.
申请公布号 US6864119(B2) 申请公布日期 2005.03.08
申请号 US20030668182 申请日期 2003.09.24
申请人 SHARP KABUSHIKI KAISHA 发明人 SEKO TOSHIHARU
分类号 H01L21/56;H01L21/60;H01L23/498;H05K1/18;H05K3/30;(IPC1-7):H01L21/44 主分类号 H01L21/56
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