METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING METAL LAYER AND INSULATION LAYER FORMED THEREON TO EASILY USE MOLYBDENUM ALLOY AS GATE LINE AND DATA LINE OF LCD,申请号KR19970047731-传众专利搜索

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发明名称	METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING METAL LAYER AND INSULATION LAYER FORMED THEREON TO EASILY USE MOLYBDENUM ALLOY AS GATE LINE AND DATA LINE OF LCD
摘要
申请公布号	KR100477141(B1)	申请公布日期	2005.03.08
申请号	KR19970047731	申请日期	1997.09.19
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, JANG SU;HONG, MUN PYO
分类号	H01L21/768;(IPC1-7):H01L21/768	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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