METHOD FOR FABRICATING INDUCTOR OF SEMICONDUCTOR DEVICE TO AVOID SURFACE OXIDATION AND VARIATION OF SURFACE CHARACTERISTIC OF INDUCTOR

摘要

PURPOSE: A method for fabricating an inductor of a semiconductor device is provided to avoid surface oxidation and a variation of a surface characteristic of an inductor exposed to the atmosphere by forming an oxide blocking layer on the surface of the inductor as a passive device. CONSTITUTION: An inductor(12) is formed on the substrate(11). An aluminum layer is formed on the surface of the inductor. An oxide blocking layer(130) is formed on the surface of the inductor having the aluminum layer. The aluminum layer is formed in an aqueous solution including aluminum positive ions by a plating method, having a thickness of 1-1500 angstroms.