METHOD OF MANUFACTURING TRANSISTOR CAPABLE OF MINIMIZING THERMAL PROCESS AND RESTRAINING DIFFUSION OF THERMIONS TO REDUCE JUNCTION LEAKAGE CURRENT

摘要

PURPOSE: A method of manufacturing a transistor is provided to prevent diffusion of channel control impurities and reduce a PN junction area by minimizing a thermal process after an impurity implantation process for controlling a channel. CONSTITUTION: A dummy gate electrode and a top insulating layer for dummy gate are formed on a semiconductor substrate(100). A first impurity region(116) is formed on a source/drain region of both sides of the dummy gate electrode. A spacer(118) is formed on a sidewall of the dummy gate electrode. A second impurity region(120) is formed by using the spacer as an ion implantation mask. A pad polysilicon layer(124) is formed on the source/drain region. A thermal process for the semiconductor substrate is performed. A third impurity region(126) is formed on a gate region. A gate electrode is formed on the gate region by removing the dummy gate oxide layer and inserting a gate insulating layer therein.