Plasma processing method and apparatus thereof

摘要

A plasma processing method includes introducing a gas into a vacuum chamber through a hole of a dielectric tube attached to a metal body fixed to the vacuum chamber while exhausting from the vacuum chamber to keep the vacuum chamber within a specified pressure. High-frequency power with a frequency ranging from 100 kHz to 3 GHz is applied to a plasma source provided so as to face a substrate mounted on a substrate electrode in the vacuum chamber to generate plasma in the vacuum chamber to perform plasma processing of the substrate.