发明名称 Memory device
摘要 A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer with variable electrical conductivity; and (e) at least one passive layer containing a source material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.
申请公布号 US6864522(B2) 申请公布日期 2005.03.08
申请号 US20030414353 申请日期 2003.04.15
申请人 ADVANCED MICRO DEVICES, INC. 发明人 KRIEGER JURI H.;YUDANOY NIKOLAI
分类号 H01L31/10;G11C11/34;G11C11/56;G11C13/02;H01L27/10;H01L27/28;H01L45/00;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L27/108;H01L29/76;H01L29/788;H01L31/119 主分类号 H01L31/10
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