发明名称 |
Memory device |
摘要 |
A memory storage and retrieval device containing (a) an electrically conductive first electrode; (b) an electrically conductive second electrode; (c) a layer stack intermediate the first and second electrodes containing (d) at least one active layer with variable electrical conductivity; and (e) at least one passive layer containing a source material for varying the electrical conductivity of the at least one active layer upon application of an electrical potential difference between the first and second electrodes.
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申请公布号 |
US6864522(B2) |
申请公布日期 |
2005.03.08 |
申请号 |
US20030414353 |
申请日期 |
2003.04.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIEGER JURI H.;YUDANOY NIKOLAI |
分类号 |
H01L31/10;G11C11/34;G11C11/56;G11C13/02;H01L27/10;H01L27/28;H01L45/00;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L27/108;H01L29/76;H01L29/788;H01L31/119 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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