METHOD OF MANUFACTURING MOSFET WITHOUT SHORT CHANNEL EFFECT USING DAMASCENE PROCESS

摘要

PURPOSE: A method of manufacturing an MOS(Metal Oxide Semiconductor) FET(Field Effect Transistor) is provided to prevent short channel effect by using a damascene process. CONSTITUTION: A first insulating layer is deposited on a semiconductor substrate(10') and a first ion-implantation for an LDD(Lightly Doped Drain) is performed thereon. A damascene pattern is formed in the resultant structure by performing dry-etching on the first insulating layer and the substrate using a first photoresist pattern as an etching mask. The first photoresist pattern is removed therefrom. A second insulating layer(16) and a conductor(18) are sequentially filled in the damascene pattern. A second ion-implantation for a source/drain is performed on the resultant structure.