Finfet gate formation using reverse trim of dummy gate

摘要

A method of forming a gate electrode for a fin field effect transistor (FinFET) includes forming a fin on a substrate and forming an oxide layer over the fin. The method further includes forming a carbon layer over the oxide layer and forming a trench in the oxide layer and the carbon layer, where the trench crosses over the fin. The method also includes filling the trench with a material to form the gate electrode.