发明名称 |
CVD organic polymer film for advanced gate patterning |
摘要 |
A bottom anti-reflective coating comprising an organic polymer layer having substantially no nitrogen and a low compressive stress in relation to a polysilicon layer is employed as the lower layer of a bi-layer antireflective coating/hardmask structure to reduce deformation of a pattern to be formed in a patternable layer. The organic polymer layer is substantially transparent to visible radiation, enabling better detection of alignment marks during a semiconductor device fabrication process and improving overlay accuracy. The organic polymer layer provides excellent step coverage and may be advantageously used in the fabrication of structures such as FinFETs.
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申请公布号 |
US6864556(B1) |
申请公布日期 |
2005.03.08 |
申请号 |
US20020335445 |
申请日期 |
2002.12.31 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YOU LU;PLAT MARINA V.;YANG CHIH YUH;BELL SCOTT A.;HUANG RICHARD J.;LYONS CHRISTOPHER F.;CHANG MARK S.;WRIGHT MARILYN I. |
分类号 |
G03F7/09;H01L21/033;H01L21/28;H01L21/3213;H01L21/47;H01L31/0232;(IPC1-7):H01L21/47;H01L31/023 |
主分类号 |
G03F7/09 |
代理机构 |
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