STRUCTURE OF TEST DEVICE GROUP TO PRECISELY ESTIMATE INFLUENCE OF COPPER CONTAMINATION UPON DEVICE

摘要

PURPOSE: A structure of a test device group is provided to precisely estimate the influence of copper contamination upon a device by indirectly analyzing a deterioration of a device characteristic caused by copper contamination. CONSTITUTION: A test device group is composed of at least two test devices(22-1 - 22-n). A MOSFET(metal-oxide-semiconductor field effect transistor)(17) is formed on a semiconductor substrate(11). An interlayer dielectric(16) is formed on the semiconductor substrate including the transistor. An interconnection pattern(18) is formed on the interlayer dielectric. An interconnection interlayer dielectric(19) is formed on the resultant structure. A part of the interconnection interlayer dielectric is etched to form a contact hole(20). A copper interconnection(21) is formed in the contact hole.