发明名称 Grounding mechanism for semiconductor devices
摘要 A configuration including a grounding mechanism protects a semiconductor device from electrical overstress damage during processes, such as an RIE process, where an electrical charge can build up on the semiconductor device. According to an exemplary embodiment, the configuration secures a semiconductor device such that a die of the device is exposed to an electrically charged environment and electrically conductive terminals of the device are isolated from the electrically charged environment. The grounding mechanism electrically connects each of the electrically conductive terminals to a ground potential while the die is exposed to the electrically charged environment.
申请公布号 US6864563(B1) 申请公布日期 2005.03.08
申请号 US20020158641 申请日期 2002.05.30
申请人 LSI LOGIC CORPORATION 发明人 COWAN JOSEPH W.
分类号 H01L23/552;(IPC1-7):H01L23/552 主分类号 H01L23/552
代理机构 代理人
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