发明名称 |
Fabrication of trenches with multiple depths on the same substrate |
摘要 |
Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches and for the shallow trenches at additional locations. Etching of the shallow and deep trenches then proceeds simultaneously.
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申请公布号 |
US6864152(B1) |
申请公布日期 |
2005.03.08 |
申请号 |
US20030442533 |
申请日期 |
2003.05.20 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
MIRBEDINI MOHAMMAD R.;GOPINATH VENKATESH P.;LIN HONG;HORNBACK VERNE;DEFIBAUGH DODD;LE YNHI |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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