| 发明名称 |
Method for manufacturing metal line contact plug of semiconductor device |
| 摘要 |
A method for manufacturing of a metal line contact plug of a semiconductor device by performing a two step CMP process using (1) a first slurry solution having high etching selectivity of metal/insulating film and (2) a second slurry solution having small etching selectivity of metal/insulating film, thereby minimizing dependency on CMP devices and separating easily a metal line contact plug.
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| 申请公布号 |
US6864177(B2) |
申请公布日期 |
2005.03.08 |
| 申请号 |
US20020329938 |
申请日期 |
2002.12.26 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG JONG GOO;AHN KI CHEOL;KWON PAN KI |
| 分类号 |
H01L21/28;C09G1/02;H01L21/321;H01L21/60;(IPC1-7):H01L21/461;H01L21/302 |
主分类号 |
H01L21/28 |
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