发明名称 |
Method and apparatus for reducing fixed charge in semiconductor device layers |
摘要 |
The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O3. When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices.
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申请公布号 |
US6864561(B2) |
申请公布日期 |
2005.03.08 |
申请号 |
US20030727889 |
申请日期 |
2003.12.04 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
IYER RAVI;THAKUR RANDHIR P. S.;RHODES HOWARD E. |
分类号 |
H01L21/316;(IPC1-7):H01L23/58;H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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