| 摘要 |
PURPOSE: An LCD(Liquid Crystal Display) comprising a TFT(Thin Film Transistor) and a method for manufacturing the TFT are provided to reduce leakage current of the TFT caused by large amount of backlight incident onto an edge portion of the channel of the TFT, thereby improving the switching characteristic of the TFT and enhancing image quality of the LCD device, by forming the TFT to have a channel length larger at edge portions than at a central portion. CONSTITUTION: An LCD comprises a TFT substrate having a plurality of TFTs(10), a counter substrate having a black matrix, a liquid crystal layer sandwiched between the TFT substrate and the counter substrate, and a backlight unit disposed at a rear side of the TFT substrate for irradiating the TFT substrate with backlight. Each of the TFTs has a channel(14) in a semiconductor layer, wherein the channel has a channel length larger at edge portions(14a,14c) than at a central portion(14b).
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