发明名称 OXIDATION METHOD TO FORM EXTREMELY THIN OXIDE LAYER WITHOUT USING CATALYZER IN CONDITION OF GOOD CONTROLLABILITY OF LAYER THICKNESS
摘要 PURPOSE: An oxidation method is provided to form an extremely thin oxide layer without using a catalyzer in a condition of good controllability of a layer thickness by confining a process condition. CONSTITUTION: Hydrogen gas and oxygen gas are introduced to the inside of a process receptacle capable of being vacuum so as to be burned so that vapor is generated. The surface of an object to be processed is oxidized by the vapor. The process pressure in the process receptacle is set to be not lower than 2000 pascal(15 torr).
申请公布号 KR20050021340(A) 申请公布日期 2005.03.07
申请号 KR20040067672 申请日期 2004.08.27
申请人 TOKYO ELECTRON LIMITED 发明人 HASEBE KAZUHIDE;IKEUCHI TOSHIYUKI;SUZUKI KEISUKE
分类号 H01L21/31;H01L21/316;H01L21/44;(IPC1-7):H01L21/31 主分类号 H01L21/31
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