LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF TO EMBODY LIGHT EMISSION WITH HIGH OUTPUT

摘要

PURPOSE: A light emitting device is provided to embody light emission with a high output by forming a light emitting layer including an InAlGaN quaternary alloy on the first main surface of a GaN substrate. CONSTITUTION: A nitride semiconductor substrate is prepared. A light emitting layer(4) including an InAlGaN quaternary alloy is formed on the first main surface of the nitride semiconductor substrate. The nitride semiconductor substrate is a GaN substrate(1) or an AlxGa1-xN substrate(0<x<=1). The bandgap energy of the AlxGa1-xN substrate corresponds to the wavelength of the light emitted by a light emitting layer including the InAlGaN quaternary alloy.