| 摘要 |
<p>PURPOSE: Provided are a resist composition which shows a high transparency at a wavelength (157 nm) of a F2 laser and a highγvalue, a high contrast and a positive type photoresist effect when exposed to a F2 laser, and is excellent in resolution and plasma dry etching resistance, and a method for forming a pattern by using the composition. CONSTITUTION: The resist composition comprises a polymer comprising a repeating unit of the formula 1; and a polymer comprising a repeating unit of the formula 2 or 3, wherein R1 and R2 are H or an acid-labile group; 0<=a<=1, 0<=b<=1 and 0.3<=a+b<=1; R3 is an acid-labile group; R4 and R5 are independently H, a C1-C4 alkyl group capable of being substituted with F, a cyano group or a hydroxyl group, or an acid-labile group; R6 is H, a C1-C4 alkyl group capable of being substituted with F, a cyano group or a hydroxyl group, or an acid-labile group; R7 is H, a C1-C4 alkyl group capable of being substituted with F, a cyano group or a hydroxyl group, or an acid-labile group; X1 is a single bond, a methylene group or an ethylene group; X2 is a single bond, a methylene group or an ethylene group; X3 is a methylene group, an ethylene group, O or S; and 0<=c<0.8, 0<d<0.8. 0<c+d<0.8, 0<=e<0.8, 0<=f<0.8, 0<e+f<0.8, 0<g<0.8, 0<c+g<0.8, 0.5<=c+d+e+f<=1, and 0.5<=c+g+e+f<=1.</p> |
