SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF TO IMPROVE CURRENT DRIVING ABILITY

摘要

PURPOSE: A semiconductor memory device is provided to improve a current driving ability by lowering the threshold voltage of a driver MOS(metal oxide semiconductor) transistor and/or an access MOS transistor in driving an SRAM(static random access memory) cell having a wordline with an increased potential. CONSTITUTION: An access MOS transistor and a driver MOS transistor are prepared. An SRAM cell includes a contact that connects a wordline with a gate electrode of the access MOS transistor. The contact is electrically connected to at least one body region of the access MOS transistor or the driver MOS transistor.