NEUTRON UNIFORMIZATION METHOD IN RADIAL DIRECTION IN NEUTRON TRANSMUTATION DOPING PROCESS TO FABRICATE SEMICONDUCTOR MATERIAL HAVING GENERALLY THE SAME RESISTIVITY

摘要

PURPOSE: A neutron uniformization method in a dial direction in a neutron transmutation doping process is provided to fabricate a semiconductor material having generally the same resistivity by making the neutron flux uniform in the center and the periphery of a silicon ingot. CONSTITUTION: After a plurality of neutron scattering layers are interposed between a plurality of silicon ingots at regular intervals(S112), neutrons are irradiated in a reactor to make the neutron flux uniform in the center part and the peripheral part of the silicon ingots through scattering of neutrons of the neutron scattering layer.