METHOD FOR FABRICATING POLYCRYSTALLINE SILICON TFT TO IMPROVE TFT CHARACTERISTIC AND EMBODY UNIFORM TFT CHARACTERISTIC

摘要

PURPOSE: A method for fabricating a polycrystalline silicon TFT(thin film transistor) is provided to improve a TFT characteristic and embody a uniform TFT characteristic by patterning an amorphous silicon layer of a particular type before irradiation of excimer laser and by removing generation of a protrusion formed by crystallization in both directions. CONSTITUTION: A buffer layer and an amorphous silicon layer(33) are consecutively formed on an insulated glass substrate. A dehydrogenation process is performed on the amorphous silicon layer. The amorphous silicon layer is selectively patterned. Excimer laser is irradiated to the inside of the patterned amorphous silicon layer to crystallize the pattern amorphous silicon layer.