发明名称 |
SYSTEM FOR MAKING THIN FILM TO CONTROL GENERATION OF FLAW ON SUBSTRATE AND IMPROVE HEATING EFFICIENCY |
摘要 |
PURPOSE: A system for making a thin film is provided to control generation of a flaw on a substrate and improve heating efficiency by reducing the particles on the right side and the back side of the substrate. CONSTITUTION: A vacuum chamber has a pumping line(13,14). The inside of the vacuum chamber(1) is divided into the first and second regions by a partition(10). An inner opening is formed in the partition and a substrate(9) passes through the inner opening. The inner opening is closed by a partition valve(15). A thin film is deposited on the substrate in the first region of the vacuum chamber by a deposition unit(2). A heater(3) heats the substrate in the second region before the deposition in the first region. The substrate is held by a holder while the heater heats the substrate in the second region. A boosting gas introducing line introduces boosting gas to the second region and increases the pressure in the second region to a viscous flow scope. A carrier carries the heated substrate to a necessary position in the first region through the inner opening. The substrate comes in point-contact with the holder. The pumping line exhausts the first region to be a vacuum pressure all the time and exhausts the boosting gas introduced from the second region when the second region is connected to the first region as a result of opening of the partition valve so that the second region becomes a vacuum pressure.
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申请公布号 |
KR20050021863(A) |
申请公布日期 |
2005.03.07 |
申请号 |
KR20040067690 |
申请日期 |
2004.08.27 |
申请人 |
ANELVA CORPORATION |
发明人 |
ISHIHARA MASAHITO |
分类号 |
C23C14/34;C23C14/02;C23C14/50;C23C14/54;C23C14/56;C23C16/00;H01L21/20;H01L21/203;(IPC1-7):H01L21/203 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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