method of fabricating semiconductor device using trench type isolation process,申请号KR19990023541-传众专利搜索

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发明名称	method of fabricating semiconductor device using trench type isolation process
摘要
申请公布号	KR100471406(B1)	申请公布日期	2005.03.07
申请号	KR19990023541	申请日期	1999.06.22
申请人		发明人
分类号	H01L21/76;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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