AlGaInP-BASED SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF REDUCING HOLE DENSITY OF ETCH STOP LAYER

摘要

PURPOSE: An AlGaInP-based semiconductor laser and a manufacturing method thereof are provided to reduce hole density of an etch stop layer by forming a highly doped region with a first conductive impurity on a lower region contacted with an etch stop layer of a first conductive current blocking layer. CONSTITUTION: An n-type AlGaInP clad layer(22) is formed on an n-type GaAs substrate(21). An AlGaInP/GaInP active layer(23) is formed on the n-type AlGaInP clad layer. Each of p-type AlGaInP clad layers(24a,24b) includes a GaInP etch stop layer(25). The second p-type clad layer has a ridge structure. N-type GaAs current blocking layers(27a,27b) are formed on the GaInP etch stop layer. A p-type GaAs contact layer(28) is formed on the n-type GaAs current blocking layers and the second p-type AlGaInP clad layer. The respective current blocking layers include a highly doped region adjacent to the etch stop layer.