发明名称 ELECTRO-OPTICAL DEVICE FOR PREVENTING MUTUAL EFFECTS OF POTENTIAL CHANGES DUE TO PARASITIC CAPACITANCES BETWEEN ADJACENT THIN FILM TRANSISTORS IN A SAMPLING CIRCUIT AND AN ELECTRONIC APPARATUS
摘要 PURPOSE: An electro-optical device and an electronic apparatus are provided to prevent mutual effects of potential changes due to parasitic capacitances between adjacent thin film transistors in a sampling circuit, thereby reducing or preventing the occurrence of ghost image due to the parasitic capacitance between adjacent data lines to improve display quality by forming an electromagnetic shield in a region between two adjacent thin film transistors. CONSTITUTION: An image display region and a peripheral region are designated on a substrate. The image display region includes a plurality of scanning lines, a plurality of data lines and a plurality of pixels. A plurality of image signal lines for supplying image signals are located in the peripheral region. And, a sampling circuit is formed in the peripheral region. The sampling circuit includes a plurality of thin film transistors(71). The thin film transistors have drains connected to drain wirings(71D) extended from data lines, sources connected to source wirings(71S) extended from the image signal lines, and gates(71G) sandwiched between the drain and the source wirings. A data line driving circuit supplies sampling circuit driving signals to the gate. Herein, electromagnetic shields(81) are disposed at least in some of regions between two adjacent thin film transistors.
申请公布号 KR20050021887(A) 申请公布日期 2005.03.07
申请号 KR20040067821 申请日期 2004.08.27
申请人 SEIKO EPSON CORPORATION 发明人 ISHII KENYA
分类号 G02F1/1368;G02F1/13;G02F1/133;G09F9/30;G09G3/20;G09G3/36;G09G5/00;H01L21/3205;H01L23/52;H01L29/786;(IPC1-7):G02F1/133 主分类号 G02F1/1368
代理机构 代理人
主权项
地址