发明名称 PLASMA SOURCE WITH INCREASED PLASMA DENSITY AND PLASMA CHAMBER USING THE SAME TO GENERATE PLASMA DENSITY FORMED IN PLASMA CHAMBER
摘要 PURPOSE: A plasma source with an increased plasma density is provided to generate a plasma density formed in a plasma chamber by preventing a magnetic filed in the periphery of a coil from being offset. CONSTITUTION: Power from a power source is applied to form plasma in a predetermined reaction space of a plasma source(1100). A conductive bushing(1110) directly receives the power from the power source, installed in the center of the plasma source. At least one coil line(1121,1122,1123,1124) is ramified from the conductive bushing, installed in the periphery of the conductive bushing. The coil lines are partially adjacent to each other. The directions of current flowing through the inside of the coil lines are opposite to each other in a portion where the coil lines are mutually adjacent.
申请公布号 KR20050021051(A) 申请公布日期 2005.03.07
申请号 KR20030059138 申请日期 2003.08.26
申请人 ADAPTIVE PLASMA TECHNOLOGY CORPORATION 发明人 KIM, NAM HUN
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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