SPIRAL INDUCTOR FORMED ON SEMICONDUCTOR SUBSTRATE AND FORMING METHOD THEREOF TO FORM ACTIVE DEVICE AND INDUCTOR ON IMPROVED SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A spiral inductor formed on a semiconductor substrate is provided to form an active device and an inductor on an improved semiconductor substrate by forming a conductive line on the upper surface of a dielectric layer and by eliminating a region of a semiconductor substrate under the conductive line. CONSTITUTION: A semiconductor substrate(10) is prepared. A dielectric layer(40) is formed on the semiconductor substrate. A continuous conductor is disposed on the dielectric layer. An opening is defined in at least a part of the semiconductor substrate under the continuous conductor. The first and second conductive vias that are substantially vertical are additionally formed in the dielectric layer. The continuous conductor includes the first and second terminal ends. The semiconductor substrate includes active regions. The first and second terminal ends are electrically connected to the active regions by the first and second vias.