| 摘要 |
PURPOSE: A magnetic random access memory device and a manufacturing method thereof are provided to improve storage sensitivity and to reduce power consumption by forming a buried wiring having low resistance and high reliability in a shorter time. CONSTITUTION: A magnetic random access memory device comprises a first wiring; a magneto resistive memory element having a tunnel insulating layer(71) interposed between ferromagnetic materials, and electrically insulated from the first wiring by a first insulating layer; a second insulating layer covering the magneto resistive memory element; the second wiring electrically connected to the magneto resistive memory element and buried in the second insulating layer while crossing with the first wiring in three dimensions with the magneto resistive memory element in between. Wherein, the first wiring and the second wiring are buried in a trench(70) of an insulating layer, and a soft magnetic material layer(83) is formed with an electroless plating in the trench at each of an outer periphery region of the first wiring and/or the second wiring. |
