| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to increase the lifetime, to reduce the power consumption and to improve the reliability by enhancing electrical/thermal/structural properties of the device. CONSTITUTION: A light emitting device includes a P type (In,Al)GaN layer(401), a P+ type (In,Al)GaN layer(402) on the P type (In,Al)GaN layer, a first metal-Ga compound layer(403) on the P+ type (In,Al)GaN layer, a first metal film(404) on the first metal-Ga compound layer, a third metal-Al compound layer(405) on the first metal film, and a conductive oxidation barrier(406) on the third metal-Al compound layer. |
