| 摘要 |
PURPOSE: Provided are monomers containing novel oxepan-2-one structure represented by formula (I) and (II), a photoresist composition containing their polymer, and a pattern formation method. The polymers prepared by polymerization of norbornene, acrylate and methacrylate monomers containing novel oxepan-2-one structure generate carboxyl acids through ring opening and without the change of mass. The photoresist polymers not only have excellent properties of anti-etching, heat resistance and adhesion but also are useful for lithography process using ArF light source in the far infrared region in preparing microcircuit of highly integrated semiconducting device. CONSTITUTION: The polymer comprises: (A) the monomers represented by formula (I) and (II), wherein R1, R2 and R4 are independently C1-4 alkyl, C1-4 alkoxy, phenyl; R3 is hydrogen, C1-20 alkyl, C1-20 alkoxy, phenyl, C1-20 hydroxy alkyl, C1-20 alkoxy alkyl, C6-30 aliphatic cyclic hydrocarbon, C6-30 aliphatic lactone; X is hydrogen or hydroxyl; monomer synthesized by reacting alcohol (III) with 2-chlorocarbonyl-5-norbornene, acryloyl chloride and methacryloyl chloride; and (B) their polymers. The photoresist composition comprises the polymers; and a photoacid generator represented by formula (IV), (V) and (VI) wherein R1, R2 and R4 are independently C1-4 alkyl, C1-4 alkoxy, phenyl; R3 is hydrogen, C1-20 alkyl, C1-20 alkoxy, phenyl, C1-20 hydroxy alkyl, C1-20 alkoxy alkyl, C6-30 aliphatic cyclic hydrocarbon, C6-30 aliphatic lactone; n is degree of polymerization value of 1000; x and y are mole ratio wherein x + y <=1. The photoresists are prepared by steps of self polymerization or copolymerization of compounds of (I) and (II) with anhydrous maleic acid; and dissolving the polymers and 0.01-20wt.% of photoacid generator (based on the polymers) in solvents. The patterns of photoresists are prepared by steps of: (a) making photoresist layer by coating the photoresist composition on the substrate; (b) exposing the photoresist layer to light; (c) heat-treating the light-exposed photoresist and (d) obtaining desired patterns by developing the products from (c).
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