PROGRAM VOLTAGE GENERATING CIRCUIT AND PROGRAMMING METHOD OF FLASH MEMORY CELL FOR SAFE PROGRAMMING OF FLASH MEMORY CELL BY GENERATING PROGRAM WORD LINE VOLTAGE IN REFERENCE VOLTAGE LEVEL

摘要

PURPOSE: A program voltage generating circuit and a programming method of a flash memory cell are provided to get stable program word line voltage, bit line voltage, and bit line current control voltage regardless of a process change by generating the program word line voltage in a reference voltage level. CONSTITUTION: A program voltage generating circuit(900) comprises a constant current source for supplying a sink current; a program word line voltage generating part(910) for generating a program word line voltage(Vwl) which is applied to a gate of the first flash memory cell in response to a comparison result of the sink current with the reference voltage(Vref) and the bit line voltage(Vbl); a bit line voltage generating part(920) for generating a bit line voltage(Vbl) according to the program current(Ipgm) in the first flash memory cell; a bit line current control voltage generating part for generating a bit line current control voltage in response to the program current in the second flash memory cell in response to the program word line voltage.