METHOD FOR MANUFACTURING CANTILEVER FOR ATOMIC FORCE MICROSCOPE HAVING FIELD EFFECT TRANSISTOR STRUCTURE FOR OBTAINING CANTILEVER HAVING MICRO CHANNEL

摘要

PURPOSE: A method for manufacturing a cantilever for an atomic force microscope having a field effect transistor structure is provided to obtain the cantilever having a micro channel without using an electric beam lithography process. CONSTITUTION: A method includes a step of forming a probe(204) on an upper surface of a second silicon layer of an SOI substrate, on which a first silicon layer, a first insulation layer, and the second silicon layer are sequentially deposited. A second insulation layer, a third insulation layer, a polysilicon layer, and a photoresist layer are sequentially stacked on the second silicon layer including the probe(204). A first mask pattern of a cantilever for an atomic force microscope is formed on an upper surface of the polysilicon layer by removing the photoresist layer through a photolithography process.