Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof

摘要

A semiconductor includes a gate electrode having a SiGe film on a a gate dielectric film that is on a silicon substrate. The gate dielectric film includes an underlying interfacial layer on the substrate, and a high-k dielectric film having higher dielectric constant than the underlying interfacial layer. The gate electrode includes a seed Si film on the high-k dielectric film and a SiGe film formed on the seed Si film. The seed Si film has a thickness of 0.1 nm or more and smaller than 5 nm.