Production of silicon nitride mask on silicon-containing layer on semiconductor substrate for producing integrated semiconductor circuits comprises forming pad oxide layer on silicon-containing layer, and further processing

摘要

The production of a silicon nitride mask on a silicon-containing layer on a semiconductor substrate (1) comprises forming a pad oxide layer (2) on the silicon-containing layer, baking the pad oxide layer in a nitrogen-containing atmosphere to partially convert the pad oxide layer into a pad oxynitride layer, forming a silicon nitride layer (3) on the pad oxide layer, forming a photolacquer layer (4) to form opening regions in the silicon nitride layer and the backed pad oxide layer, anisotropically etching the silicon nitride layer and the backed pad oxide layer using the photolacquer structure to form the silicon nitride mask, and removing the photolacquer structure.