METHOD AND EQUIPMENT FOR FORMING TUNGSTEN CONTACT IN SEMICONDUCTOR DEVICE BY CONFORMALLY FORMING TUNGSTEN NITRIDE FILM OVER WHOLE SURFACE

摘要

PURPOSE: A method and equipment for forming a tungsten contact in a semiconductor device are provided to enhance the characteristic of step coverage by conformally forming a tungsten nitride film over the whole surface including even a bent portion. CONSTITUTION: A semiconductor substrate(1) is exposed by a contact hole(5) perforating a interlayer dielectric(3). A tungsten silicide layer(7) covering the at least bottom of the contact hole is formed. A tungsten nitride film(11) is conformally formed over the whole surface. A contact tungsten film(1) is formed on the tungsten nitride film.