| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a metal wiring structure and a metal wiring method for preventing the production of any void. <P>SOLUTION: On a primary interlayer dielectric 106 and lower metallic film pattern 108b, there is disposed an intermetal insulating film 112 having a via contact hall 120b that exposes part of the surface of the lower metallic film pattern 108b. On the intermetal insulating film 112, there is disposed a secondary interlayer dielectric 116 having a trench 118b, which exposes the via contact hall 120b. A barrier metallic layer 122b is formed on the side surface of the via contact hall 120b and the exposed surface of a secondary lower metallic film pattern 108b. On the barrier metallic layer 122b, there is disposed a secondary upper metallic wiring pattern 124b, which fills the inside of the via contact hall 120b and part of a trench 118b. On the secondary metallic wiring film pattern 124b, a void diffusion prevention film 128 is disposed. And finally, on the void diffusion prevention film 128, a tertiary upper metallic wiring film pattern 130b is filled. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
